The present work reports Er-doped channel oxidized porous silicon waveguides (OPSWG) formed from n+-type Si by the two-step anodisation process. Er has been introduced into porous silicon before oxidation by a cathodic treatment in 0.1 M Er (NO3)3 aqueous solution. A correlation between Er concentration and refractive index profiles has shown dominant core doping with Er relative to cladding regions. Reported Er concentration of 0.8 at.% in the OPSWG is large enough to attain the amplification effect.

Er-doped Oxidized Porous Silicon Waveguides / Balucani, Marco; V., Bondarenko; G., Lamedica; A., Ferrari; L., Dolgyi; N., Vorozov; V., Yakovtseva; S., Volchek; V., Petrovich; N., Kazuchits. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 396:(2001), pp. 201-203.

Er-doped Oxidized Porous Silicon Waveguides

BALUCANI, Marco;
2001

Abstract

The present work reports Er-doped channel oxidized porous silicon waveguides (OPSWG) formed from n+-type Si by the two-step anodisation process. Er has been introduced into porous silicon before oxidation by a cathodic treatment in 0.1 M Er (NO3)3 aqueous solution. A correlation between Er concentration and refractive index profiles has shown dominant core doping with Er relative to cladding regions. Reported Er concentration of 0.8 at.% in the OPSWG is large enough to attain the amplification effect.
2001
01 Pubblicazione su rivista::01a Articolo in rivista
Er-doped Oxidized Porous Silicon Waveguides / Balucani, Marco; V., Bondarenko; G., Lamedica; A., Ferrari; L., Dolgyi; N., Vorozov; V., Yakovtseva; S., Volchek; V., Petrovich; N., Kazuchits. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 396:(2001), pp. 201-203.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/102216
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