The properties of porous silicon (PS) are closely connected to its morphology, much investigation has been done in order to correlate the morphological characteristics of PS with the anodisation parameters. In this paper the results of morphological analysis of PS formed on N(+)type substrates of < 1 0 0 > and < 1 1 1 > orientation are presented. The dependences of the porosity, thickness of PS, density of pores and of the effective surface on the current density are obtained. Interpretation of these results in terms of diffusion layer and energy levels is given, with special attention given to the low current density case.
Investigation of morphology of porous silicon formed on N+ type silicon / G., Lamedica; Balucani, Marco; V., Bondarenko; L., Franchina; L., Dolgyi; V., Yakovtseva; Ferrari, Aldo. - In: JOURNAL OF POROUS MATERIALS. - ISSN 1380-2224. - STAMPA. - 7:1(2000), pp. 23-26. (Intervento presentato al convegno 1st International Conference on Porous Semiconductors - Science and Technology (PSST 98) tenutosi a MALLORCA, SPAIN nel MAR 16-20, 1998) [10.1023/a:1009627412800].
Investigation of morphology of porous silicon formed on N+ type silicon
BALUCANI, Marco;FERRARI, Aldo
2000
Abstract
The properties of porous silicon (PS) are closely connected to its morphology, much investigation has been done in order to correlate the morphological characteristics of PS with the anodisation parameters. In this paper the results of morphological analysis of PS formed on N(+)type substrates of < 1 0 0 > and < 1 1 1 > orientation are presented. The dependences of the porosity, thickness of PS, density of pores and of the effective surface on the current density are obtained. Interpretation of these results in terms of diffusion layer and energy levels is given, with special attention given to the low current density case.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
