Thin films of carbon nitride have been realized in a downstream RF plasma beam discharge generated in argon/nitrogen with carbon electrodes. The deposition has been performed on the top of a-Si:H or a-SiC:H layers previously deposited in diode type CVD reactor from methane and silane. The surface topography produced by the deposition procedures has been studied by atomic force microscopy (AFM) technique. The obtained samples have been investigated by secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR) and UV-Vis optical absorption. It is shown that the formation of SiC and SiCN interlayers occurs, which is promoted by the reactions of plasma C, N, and CN gaseous species with the silicon atoms from the base film. (C) 2001 Published by Elsevier Science B.V.
Formation of intermediate SiCN interlayer during deposition of CNx on a-Si : H or a-SiC : H thin films / B., Mitu; G., Dinescu; E., Budianu; Ferrari, Aldo; Balucani, Marco; G., La Medica; A., Dauscher; M., Dinescu. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 184:1-4(2001), pp. 96-100. (Intervento presentato al convegno Spring Meeting of the European-Materials-Research-Society tenutosi a STRASBOURG, FRANCE nel JUN 05-08, 2001) [10.1016/s0169-4332(01)00666-3].
Formation of intermediate SiCN interlayer during deposition of CNx on a-Si : H or a-SiC : H thin films
FERRARI, Aldo;BALUCANI, Marco;
2001
Abstract
Thin films of carbon nitride have been realized in a downstream RF plasma beam discharge generated in argon/nitrogen with carbon electrodes. The deposition has been performed on the top of a-Si:H or a-SiC:H layers previously deposited in diode type CVD reactor from methane and silane. The surface topography produced by the deposition procedures has been studied by atomic force microscopy (AFM) technique. The obtained samples have been investigated by secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR) and UV-Vis optical absorption. It is shown that the formation of SiC and SiCN interlayers occurs, which is promoted by the reactions of plasma C, N, and CN gaseous species with the silicon atoms from the base film. (C) 2001 Published by Elsevier Science B.V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
