Inductor-less CMOS filters with bandwidth exceeding several GHz are required in high-speed data converter applications. This paper introduces two complementary biquad filters, one N-based and the other P-based, utilizing the well-established flipped voltage follower (FVF) stage. These filters exhibit more than 7 GHz cut-off frequency and a low power consumption of 0.54 mW/pole for the N-type biquad, and 0.3 mW/pole for the Ptype one, demonstrating impressive figures-of-merit (FOMs) even considering bandwidth and dynamic range. The implementation of these biquads in the STMicroelectronics FD-SOI 28-nm CMOS process, along with extensive simulations, ensures stable performance under process, supply voltage and temperature (PVT) variations and mismatches, as confirmed by post-layout simulations. Notably, the area occupied by each biquad is merely 246 mu m2 2 for N-type biquad and 193 mu m2 2 for P-type, marking one of the smallest footprints in the existing literature. The achieved figures-of-merit are noteworthy, showcasing excellent power efficiency, minimal area occupation, and commendable dynamic range.

A novel FVF-based GHz-range biquad in a 28 nm CMOS FD-SOI technology / Lombardo, Matteo; Centurelli, Francesco; Monsurro', Pietro; Trifiletti, Alessandro. - In: AEÜ. INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS. - ISSN 1434-8411. - 185:(2024). [10.1016/j.aeue.2024.155466]

A novel FVF-based GHz-range biquad in a 28 nm CMOS FD-SOI technology

Lombardo, Matteo;Centurelli, Francesco;Monsurro', Pietro;Trifiletti, Alessandro
2024

Abstract

Inductor-less CMOS filters with bandwidth exceeding several GHz are required in high-speed data converter applications. This paper introduces two complementary biquad filters, one N-based and the other P-based, utilizing the well-established flipped voltage follower (FVF) stage. These filters exhibit more than 7 GHz cut-off frequency and a low power consumption of 0.54 mW/pole for the N-type biquad, and 0.3 mW/pole for the Ptype one, demonstrating impressive figures-of-merit (FOMs) even considering bandwidth and dynamic range. The implementation of these biquads in the STMicroelectronics FD-SOI 28-nm CMOS process, along with extensive simulations, ensures stable performance under process, supply voltage and temperature (PVT) variations and mismatches, as confirmed by post-layout simulations. Notably, the area occupied by each biquad is merely 246 mu m2 2 for N-type biquad and 193 mu m2 2 for P-type, marking one of the smallest footprints in the existing literature. The achieved figures-of-merit are noteworthy, showcasing excellent power efficiency, minimal area occupation, and commendable dynamic range.
2024
analog filters; anti-aliasing; inductor-less filters; CMOS integrated circuits
01 Pubblicazione su rivista::01a Articolo in rivista
A novel FVF-based GHz-range biquad in a 28 nm CMOS FD-SOI technology / Lombardo, Matteo; Centurelli, Francesco; Monsurro', Pietro; Trifiletti, Alessandro. - In: AEÜ. INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS. - ISSN 1434-8411. - 185:(2024). [10.1016/j.aeue.2024.155466]
File allegati a questo prodotto
File Dimensione Formato  
Lombardo_A novel FVF-based _2024.pdf

solo gestori archivio

Tipologia: Versione editoriale (versione pubblicata con il layout dell'editore)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 4.02 MB
Formato Adobe PDF
4.02 MB Adobe PDF   Contatta l'autore
Lombardo_A novel FVF-based_Post-print_2024.pdf

accesso aperto

Tipologia: Documento in Post-print (versione successiva alla peer review e accettata per la pubblicazione)
Licenza: Creative commons
Dimensione 2.35 MB
Formato Adobe PDF
2.35 MB Adobe PDF

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1717602
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact