To improve the gate oxide long term performance of MOSFETs in back side illuminated CMOS image sensors the wafer back is patterned with suitable through-silicon-trenches. We demonstrate that the reliability improvement is due to the annealing of the gate oxide border traps thanks to passivating chemical species carried by trenches.
Through-silicon-trench in back-side-illuminated CMOS image sensors for the improvement of gate oxide long term performance / Vici, Andrea; Russo, F.; Lovisi, N.; Latessa, L.; Marchioni, Andrea; Casella, ANNA RITA; Irrera, F.. - 2018-:(2019), pp. 32.3.1-32.3.4. (Intervento presentato al convegno 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 tenutosi a usa) [10.1109/IEDM.2018.8614571].
Through-silicon-trench in back-side-illuminated CMOS image sensors for the improvement of gate oxide long term performance
VICI, ANDREA;Russo, F.;CASELLA, ANNA RITA;Irrera, F.
2019
Abstract
To improve the gate oxide long term performance of MOSFETs in back side illuminated CMOS image sensors the wafer back is patterned with suitable through-silicon-trenches. We demonstrate that the reliability improvement is due to the annealing of the gate oxide border traps thanks to passivating chemical species carried by trenches.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
