We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield. The approach takes into account all the fabrication process parameter variations specified in an industrial PDK, in addition to operating condition range and NBTI aging. The final design solutions present transistor sizing, which depart from intuitive transistor sizing criteria and show dramatic yield improvements, which have been verified by Monte Carlo SPICE analysis.

Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations / Abbas, Zia; Olivieri, Mauro; Ripp, Andreas. - In: JOURNAL OF COMPUTATIONAL ELECTRONICS. - ISSN 1572-8137. - ELETTRONICO. - (2016), pp. 1424-1439. [10.1007/s10825-016-0878-2]

Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations

ABBAS, ZIA;OLIVIERI, Mauro;
2016

Abstract

We present the detailed results of the application of mathematical optimization algorithms to transistor sizing in a full-adder cell design, to obtain the maximum expected fabrication yield. The approach takes into account all the fabrication process parameter variations specified in an industrial PDK, in addition to operating condition range and NBTI aging. The final design solutions present transistor sizing, which depart from intuitive transistor sizing criteria and show dramatic yield improvements, which have been verified by Monte Carlo SPICE analysis.
2016
Circuit sizing; CMOS; delay; leakage; NBTI; statistical variations; yield; electrical and electronic engineering; atomic and molecular physics, and optics; electronic, optical and magnetic materials; modeling and simulation
01 Pubblicazione su rivista::01a Articolo in rivista
Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations / Abbas, Zia; Olivieri, Mauro; Ripp, Andreas. - In: JOURNAL OF COMPUTATIONAL ELECTRONICS. - ISSN 1572-8137. - ELETTRONICO. - (2016), pp. 1424-1439. [10.1007/s10825-016-0878-2]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/889868
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