The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs1-xNx, are discussed. The remarkable consequences of hydrogen irradiation include tuneable and reversible changes in the electronic, optical, structural, and electrical properties of these materials. The highly trapping-limited diffusion of H atoms in dilute nitrides results in the formation of extremely sharp heterointerfaces between H-containing and H-free regions of the crystals. This, in turn, offers an unprecedented possibility to tailor the physical properties of a semiconductor chip in its growth plane with nanometer precision. A number of examples are presented and discussed.
Hydrogen Incorporation in III-N-V Semiconductors: From Macroscopic to Nanometer Control of the Materials' Physical Properties / Trotta, Rinaldo; Polimeni, Antonio; Capizzi, Mario. - In: ADVANCED FUNCTIONAL MATERIALS. - ISSN 1616-301X. - STAMPA. - 22:9(2012), pp. 1782-1801. [10.1002/adfm.201102053]
Hydrogen Incorporation in III-N-V Semiconductors: From Macroscopic to Nanometer Control of the Materials' Physical Properties
TROTTA, RINALDO;POLIMENI, Antonio;CAPIZZI, Mario
2012
Abstract
The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs1-xNx, are discussed. The remarkable consequences of hydrogen irradiation include tuneable and reversible changes in the electronic, optical, structural, and electrical properties of these materials. The highly trapping-limited diffusion of H atoms in dilute nitrides results in the formation of extremely sharp heterointerfaces between H-containing and H-free regions of the crystals. This, in turn, offers an unprecedented possibility to tailor the physical properties of a semiconductor chip in its growth plane with nanometer precision. A number of examples are presented and discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
