The effect of hydrogen irradiation on the optical properties of GaAs(1-x)N(x)/GaAs heterostructures was investigated using photoreflectance and reflectance techniques. Systematic measurements performed on both as-grown and hydrogenated samples for N-concentrations ranging from 0.0% to 3.5% and for H-implanted doses from 3 x 10(18) to 6 x 10(18) ions/cm(2) have shown that (a) the H-induced widening of the energy gap is accompanied by a decrease of the refractive index of the H-treated samples with respect to the as-grown ones, resulting in an index mismatch that can be as large as 2% in the subgap spectral region; and (b) the presence of compressive strain in fully passivated GaAsN determines a decrease of the refractive index even below that of GaAs that can be eliminated via moderate thermal annealing. These findings are promising for the development of heterostructures with planar geometry, in which the simultaneous confinement of both carriers and photons, even on a nanometric scale, can be obtained in a single step process. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3597818]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures / M., Geddo; M., Patrini; G., Guizzetti; M., Galli; Trotta, Rinaldo; Polimeni, Antonio; Capizzi, Mario; F., Martelli; S., Rubini. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 109:12(2011), p. 123511. [10.1063/1.3597818]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures

TROTTA, RINALDO;POLIMENI, Antonio;CAPIZZI, Mario;
2011

Abstract

The effect of hydrogen irradiation on the optical properties of GaAs(1-x)N(x)/GaAs heterostructures was investigated using photoreflectance and reflectance techniques. Systematic measurements performed on both as-grown and hydrogenated samples for N-concentrations ranging from 0.0% to 3.5% and for H-implanted doses from 3 x 10(18) to 6 x 10(18) ions/cm(2) have shown that (a) the H-induced widening of the energy gap is accompanied by a decrease of the refractive index of the H-treated samples with respect to the as-grown ones, resulting in an index mismatch that can be as large as 2% in the subgap spectral region; and (b) the presence of compressive strain in fully passivated GaAsN determines a decrease of the refractive index even below that of GaAs that can be eliminated via moderate thermal annealing. These findings are promising for the development of heterostructures with planar geometry, in which the simultaneous confinement of both carriers and photons, even on a nanometric scale, can be obtained in a single step process. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3597818]
2011
01 Pubblicazione su rivista::01a Articolo in rivista
Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures / M., Geddo; M., Patrini; G., Guizzetti; M., Galli; Trotta, Rinaldo; Polimeni, Antonio; Capizzi, Mario; F., Martelli; S., Rubini. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 109:12(2011), p. 123511. [10.1063/1.3597818]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/392425
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