A novel nanofabrication method based on nitrogen passivation by hydrogen in GaAsN is presented. This approach combines a masked hydrogenation process with a very sharp H forefront in GaAsN. This allows embedding a GaAsN nanometer-sized region in a GaAs barrier, resulting in the formation of ordered arrays of nanoemitters with marked zero-dimensional spectroscopic characteristics.
Fabrication of Site-Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures / Trotta, Rinaldo; Polimeni, Antonio; Faustino, Martelli; Pettinari, Giorgio; Capizzi, Mario; Laura, Felisari; Silvia, Rubini; Marco, Francardi; Annamaria, Gerardino; Peter C. M., Christianen; Jan C., Maan. - In: ADVANCED MATERIALS. - ISSN 0935-9648. - STAMPA. - 23:24(2011), pp. 2706-2710. [10.1002/adma.201004703]
Fabrication of Site-Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures
TROTTA, RINALDO;POLIMENI, Antonio;PETTINARI, GIORGIO;CAPIZZI, Mario;
2011
Abstract
A novel nanofabrication method based on nitrogen passivation by hydrogen in GaAsN is presented. This approach combines a masked hydrogenation process with a very sharp H forefront in GaAsN. This allows embedding a GaAsN nanometer-sized region in a GaAs barrier, resulting in the formation of ordered arrays of nanoemitters with marked zero-dimensional spectroscopic characteristics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
