We use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy. © 2011 American Institute of Physics.
Laser writing of the electronic activity of N- and H-atoms in GaAs / N., Balakrishnan; A., Patane; O., Makarovsky; Polimeni, Antonio; Capizzi, Mario; F., Martelli; S., Rubini. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 99:2(2011), p. 021105. [10.1063/1.3610464]
Laser writing of the electronic activity of N- and H-atoms in GaAs
POLIMENI, Antonio;CAPIZZI, Mario;
2011
Abstract
We use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy. © 2011 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
