We present two different methods to pattern the band gap of dilute nitrides in their growth plane by exploiting the unique capability of H to passivate N in these materials. By deposition of metallic masks on and subsequent H irradiation of GaAs1-xNx, we artificially create zones of the crystal having the band gap of untreated GaAs1-XNX well surrounded by GaAs-like barriers. Alternatively, by focusing an energetic e--beam on the surface of hydrogenated GaAs1-xN x we displace H atoms from their N passivation sites, thus leading to a controlled decrease in the crystal band gap in the spatial region where the e--beam is steered. © 2007 American Institute of Physics.
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors / FELICI, Marco; POLIMENI, Antonio; F., MASIA; TROTTA, RINALDO; PETTINARI, GIORGIO; CAPIZZI, Mario; G., SALVIATI; L., LAZZARINI; N., ARMANI; M., PICCIN; G., BAIS; F., MARTELLI; S., RUBINI; A., FRANCIOSI; L., MARIUCCI. - STAMPA. - 893:(2007), pp. 31-32. (Intervento presentato al convegno 28th International Conference on the Physics of Semiconductors (ICPS-27) tenutosi a Vienna; Austria nel 24-28 Luglio 2006) [10.1063/1.2729755].
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors
FELICI, Marco;POLIMENI, Antonio;TROTTA, RINALDO;PETTINARI, GIORGIO;CAPIZZI, Mario;
2007
Abstract
We present two different methods to pattern the band gap of dilute nitrides in their growth plane by exploiting the unique capability of H to passivate N in these materials. By deposition of metallic masks on and subsequent H irradiation of GaAs1-xNx, we artificially create zones of the crystal having the band gap of untreated GaAs1-XNX well surrounded by GaAs-like barriers. Alternatively, by focusing an energetic e--beam on the surface of hydrogenated GaAs1-xN x we displace H atoms from their N passivation sites, thus leading to a controlled decrease in the crystal band gap in the spatial region where the e--beam is steered. © 2007 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
