Hydrogen irradiation leads to the passivation of the electronic activity of nitrogen in Ga(AsN), thus allowing a fine tuning of the material optical properties.Here, some recent results on the effects that hydrogen irradiation has on the electronic properties of diluted III-N-V alloys are presented.In Ga(AsN), both the increase in the electron effective mass and exciton wave function localization induced by nitrogen are reversed in a fully controllable manner by hydrogen irradiation.In Ga(PN), hydrogen widens the band gap and exposes gradually in the gap nitrogen complex states formerly resonant with the conduction band.
Hydrogen related effects in diluted nitrides / Polimeni, Antonio; F., Masia; Felici, Marco; G., BALDASSARRI HGER VON HGERSTHAL; M., Bissiri; Frova, Andrea; Capizzi, Mario; P. J., Klar; W., Stolz; I. A., Buyanova; W. M., Chen; H. P., Xin; C. W., Tu. - In: PHYSICA. B, CONDENSED MATTER. - ISSN 0921-4526. - STAMPA. - 340-342:(2003), pp. 371-376. [10.1016/j.physb.2003.09.064]
Hydrogen related effects in diluted nitrides
POLIMENI, Antonio;FELICI, Marco;FROVA, Andrea;CAPIZZI, Mario;
2003
Abstract
Hydrogen irradiation leads to the passivation of the electronic activity of nitrogen in Ga(AsN), thus allowing a fine tuning of the material optical properties.Here, some recent results on the effects that hydrogen irradiation has on the electronic properties of diluted III-N-V alloys are presented.In Ga(AsN), both the increase in the electron effective mass and exciton wave function localization induced by nitrogen are reversed in a fully controllable manner by hydrogen irradiation.In Ga(PN), hydrogen widens the band gap and exposes gradually in the gap nitrogen complex states formerly resonant with the conduction band.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
