The influence of nitrogen cluster states on the conduction band (CB) structure of GaAs1-xNx is probed by measuring the effective mass and gyromagnetic ratio of electrons for x < 0.7%. An unusual compositional dependence of these two important CB parameters is found. Such behaviors are well reproduced by a modified k·p model taking into account a non-monotonic loss of γ character of the CB minimum due to multiple crossings between the red-shifting conduction band edge and N cluster states. As well, sudden variations in the electron mass can be externally induced by applying a hydrostatic pressure, which brings the upward moving CB edge into interaction with N states, which at ambient pressure are resonant with the GaAs1-xNx CB continuum. © 2007 American Institute of Physics.

Photoluminescence under magnetic field and hydrostatic pressure in GaAs1−xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio / F., Masia; Pettinari, Giorgio; Polimeni, Antonio; Felici, Marco; Trotta, Rinaldo; Capizzi, Mario; T., Niebling; H., Guenther; P. J., Klar; W., Stolz; A., Lindsay; E. P., O'Reilly; M., Piccin; G., Bais; S., Rubini; F., Martelli; A., Franciosi. - STAMPA. - 893:(2007), pp. 157-158. (Intervento presentato al convegno 28th International Conference on the Physics of Semiconductors (ICPS-28) tenutosi a Vienna; Austria nel 24-28 Luglio 2006) [10.1063/1.2729817].

Photoluminescence under magnetic field and hydrostatic pressure in GaAs1−xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio

PETTINARI, GIORGIO;POLIMENI, Antonio;FELICI, Marco;TROTTA, RINALDO;CAPIZZI, Mario;
2007

Abstract

The influence of nitrogen cluster states on the conduction band (CB) structure of GaAs1-xNx is probed by measuring the effective mass and gyromagnetic ratio of electrons for x < 0.7%. An unusual compositional dependence of these two important CB parameters is found. Such behaviors are well reproduced by a modified k·p model taking into account a non-monotonic loss of γ character of the CB minimum due to multiple crossings between the red-shifting conduction band edge and N cluster states. As well, sudden variations in the electron mass can be externally induced by applying a hydrostatic pressure, which brings the upward moving CB edge into interaction with N states, which at ambient pressure are resonant with the GaAs1-xNx CB continuum. © 2007 American Institute of Physics.
2007
28th International Conference on the Physics of Semiconductors (ICPS-28)
Band structure calculations; Dilute nitrides; Hydrostatic pressure
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Photoluminescence under magnetic field and hydrostatic pressure in GaAs1−xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio / F., Masia; Pettinari, Giorgio; Polimeni, Antonio; Felici, Marco; Trotta, Rinaldo; Capizzi, Mario; T., Niebling; H., Guenther; P. J., Klar; W., Stolz; A., Lindsay; E. P., O'Reilly; M., Piccin; G., Bais; S., Rubini; F., Martelli; A., Franciosi. - STAMPA. - 893:(2007), pp. 157-158. (Intervento presentato al convegno 28th International Conference on the Physics of Semiconductors (ICPS-28) tenutosi a Vienna; Austria nel 24-28 Luglio 2006) [10.1063/1.2729817].
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/366095
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact