In this paper we present a gain enhancement technique for very low-voltage deep sub-micron amplifiers based on the use of a CCII-based negative impedance converter. Relaxed specifications on the current conveyor allow an easy implementation of this technique in a sub-1 V environment, where common topologies such as the cascode and the differential pair cannot be used. An example implementation in a 65-nm CMOS technology, using ±0.35 V supply voltage and a simple 6-transistor CCII topology, shows a 15.5-dB gain enhancement with a good robustness against process variations. ©2008 IEEE.
A gain-enhancing technique for very low-voltage amplifiers / Centurelli, Francesco; Monsurro', Pietro; Scotti, Giuseppe; Trifiletti, Alessandro. - (2008), pp. 2282-2285. (Intervento presentato al convegno 2008 IEEE International Symposium on Circuits and Systems, ISCAS 2008 tenutosi a Seattle, WA nel 18 May 2008 through 21 May 2008) [10.1109/iscas.2008.4541909].
A gain-enhancing technique for very low-voltage amplifiers
CENTURELLI, Francesco;MONSURRO', PIETRO;SCOTTI, Giuseppe;TRIFILETTI, Alessandro
2008
Abstract
In this paper we present a gain enhancement technique for very low-voltage deep sub-micron amplifiers based on the use of a CCII-based negative impedance converter. Relaxed specifications on the current conveyor allow an easy implementation of this technique in a sub-1 V environment, where common topologies such as the cascode and the differential pair cannot be used. An example implementation in a 65-nm CMOS technology, using ±0.35 V supply voltage and a simple 6-transistor CCII topology, shows a 15.5-dB gain enhancement with a good robustness against process variations. ©2008 IEEE.File | Dimensione | Formato | |
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