Raman and combined infrared transmission and re?ectivity measurements were carried out at room temperature (RT) on monoclinic VO 2 over the 0–19 GPa and 0–14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P 10 GPa whereas subtle modi?cations of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap ?lling, are observed for P > P . Differently from P 0, where the VO 2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.
Evidence of a pressure-induced metallization process in monoclinic VO2 / E., Arcangeletti; Baldassarre, Leonetta; DI CASTRO, Daniele; Lupi, Stefano; L., Malavasi; C., Marini; A., Perucchi; Postorino, Paolo. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 98:(2007), pp. 196406-1-196406-4. [10.1103/PhysRevLett.98.196406]
Evidence of a pressure-induced metallization process in monoclinic VO2
BALDASSARRE, Leonetta;DI CASTRO, Daniele;LUPI, Stefano;POSTORINO, Paolo
2007
Abstract
Raman and combined infrared transmission and re?ectivity measurements were carried out at room temperature (RT) on monoclinic VO 2 over the 0–19 GPa and 0–14 GPa pressure ranges. Both lattice dynamics and optical gap show a remarkable stability up to P 10 GPa whereas subtle modi?cations of V ion arrangements within the monoclinic lattice, together with the onset of a metallization process via band gap ?lling, are observed for P > P . Differently from P 0, where the VO 2 metallic phase is found only in conjunction with the rutile structure above 340 K, a new RT metallic phase within a monoclinic structure appears accessible in the high pressure regime.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
