Effect of postgrowth hydrogen treatment on defects and their role in carrier recombination in GaNP alloys is examined by photoluminescence (PL) and optically detected magnetic resonance. We present direct experimental evidence for effective activation of several defects by low-energy subthreshold hydrogen treatment (<= 100 eV H ions). Among them, two defect complexes are identified to contain a Ga interstitial. Possible mechanisms for the H-induced defect activation and creation are discussed. Carrier recombination via these defects is shown to efficiently compete with the near band-edge PL, explaining the observed degraded optical quality of the alloys after the H treatment. (C) 2011 American Institute of Physics. [doi:10.1063/1.3576920]
Effect of postgrowth hydrogen treatment on defects in GaNP / D., Dagnelund; X. J., Wang; C. W., Tu; Polimeni, Antonio; Capizzi, Mario; W. M., Chen; I. A., Buyanova. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 98:14(2011), pp. 141920-141920-3. [10.1063/1.3576920]
Effect of postgrowth hydrogen treatment on defects in GaNP
POLIMENI, Antonio;CAPIZZI, Mario;
2011
Abstract
Effect of postgrowth hydrogen treatment on defects and their role in carrier recombination in GaNP alloys is examined by photoluminescence (PL) and optically detected magnetic resonance. We present direct experimental evidence for effective activation of several defects by low-energy subthreshold hydrogen treatment (<= 100 eV H ions). Among them, two defect complexes are identified to contain a Ga interstitial. Possible mechanisms for the H-induced defect activation and creation are discussed. Carrier recombination via these defects is shown to efficiently compete with the near band-edge PL, explaining the observed degraded optical quality of the alloys after the H treatment. (C) 2011 American Institute of Physics. [doi:10.1063/1.3576920]I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
