The effect of atomic hydrogen on the electronic properties of (InGa)(AsN)/GaAs single quantum wells (QWs) has been investigated by photoluminescence (PL) spectroscopy. For increasing hydrogen dose, the band gap of the material increases until it reaches the value corresponding to a N-free reference QW. The band gap variation is accompanied by an increase of the line width of the PL spectra and a decrease of the PL efficiency. Annealing at 500 degreesC fully recovers the band gap and PL line width the sample had before hydrogenation. These results are accounted for by the formation of N-H complexes, which lowers the effective nitrogen content in the well. (C) 2001 American Institute of Physics.
Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells / G., Baldassarri; M., Bissiri; Polimeni, Antonio; Capizzi, Mario; M., Fischer; M., Reinhardt; A., Forchel. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 78:22(2001), pp. 3472-3474. [10.1063/1.1376436]
Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells
POLIMENI, Antonio;CAPIZZI, Mario;
2001
Abstract
The effect of atomic hydrogen on the electronic properties of (InGa)(AsN)/GaAs single quantum wells (QWs) has been investigated by photoluminescence (PL) spectroscopy. For increasing hydrogen dose, the band gap of the material increases until it reaches the value corresponding to a N-free reference QW. The band gap variation is accompanied by an increase of the line width of the PL spectra and a decrease of the PL efficiency. Annealing at 500 degreesC fully recovers the band gap and PL line width the sample had before hydrogenation. These results are accounted for by the formation of N-H complexes, which lowers the effective nitrogen content in the well. (C) 2001 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
