The temperature dependence of the photoluminescence (PL) efficiency of (InGa)(AsN)/GaAs single quantum wells (QWs) has been studied from 10 to 500 K. The PL intensity of N-containing samples is almost constant from room temperature to 500 K, in contrast to what is observed in (InGa)As QWs grown under the same conditions. This thermal stability increases for an increase in nitrogen content. We discuss these effects in terms of strain compensation at high nitrogen concentrations. (C) 2001 American Institute of Physics.
High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells / M., Bissiri; V., Gaspari; Polimeni, Antonio; Capizzi, Mario; Frova, Andrea; M., Fischer; M., Reinhardt; A., Forchel. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 79:16(2001), pp. 2585-2587. [10.1063/1.1409333]
High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells
POLIMENI, Antonio;CAPIZZI, Mario;FROVA, Andrea;
2001
Abstract
The temperature dependence of the photoluminescence (PL) efficiency of (InGa)(AsN)/GaAs single quantum wells (QWs) has been studied from 10 to 500 K. The PL intensity of N-containing samples is almost constant from room temperature to 500 K, in contrast to what is observed in (InGa)As QWs grown under the same conditions. This thermal stability increases for an increase in nitrogen content. We discuss these effects in terms of strain compensation at high nitrogen concentrations. (C) 2001 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
