Strong suppression of potential fluctuations in the band edges of GaNAs alloys due to postgrowth hydrogen treatment, which is accompanied by a reopening of the alloy band gap, is revealed from temperature-dependent photoluminescence (PL) and PL excitation measurements. The effect likely indicates preferential trapping of hydrogen near the lattice sites with the highest nitrogen content. A remarkable improvement in the radiative efficiency of the alloys at room temperature is also demonstrated and is ascribed to efficient hydrogen passivation of competing nonradiative centers. (C) 2003 American Institute of Physics.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
|Titolo:||Hydrogen-induced improvements in optical quality of GaNAs alloys|
|Data di pubblicazione:||2003|
|Appartiene alla tipologia:||01a Articolo in rivista|