An accurate model of MESFETs and HEMTs composed of a dc section and a multibias linear dynamic part is proposed. An automatic procedure to identify model parameters has been developed. Errors below 3% over the whole device working region have been found with GaAs HEMTs up to 50 GHz
A novel bias-dependent rational model for MESFET and HEMT devices / Centurelli, Francesco; Pisa, Stefano; Tommasino, Pasquale; Trifiletti, Alessandro. - In: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. - ISSN 0895-2477. - STAMPA. - 24:2(2000), pp. 102-106. [10.1002/(SICI)1098-2760(20000120)24:2<102::AID-MOP7>3.0.CO;2-Z]
A novel bias-dependent rational model for MESFET and HEMT devices
CENTURELLI, Francesco;PISA, Stefano;TOMMASINO, PASQUALE;TRIFILETTI, Alessandro
2000
Abstract
An accurate model of MESFETs and HEMTs composed of a dc section and a multibias linear dynamic part is proposed. An automatic procedure to identify model parameters has been developed. Errors below 3% over the whole device working region have been found with GaAs HEMTs up to 50 GHzFile allegati a questo prodotto
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