A new statistical nonlinear model of GaAs FET MMICs which allows the representation of distance-dependent technological parameter variations by means of equivalent circuit parameters, and an automatic extraction procedure, are presented. The capability to reproduce statistical distribution has been successfully checked on S parameters at different distances in the 1–50 GHz frequency range.
A new procedure for non-linear statistical model extraction of GaAs FET integrated circuits / Centurelli, Francesco; A., DI MARTINO; Scotti, Giuseppe; Tommasino, Pasquale; Trifiletti, Alessandro. - In: INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING. - ISSN 1096-4290. - STAMPA. - 13:5(2003), pp. 348-356. [10.1002/mmce.10095]
A new procedure for non-linear statistical model extraction of GaAs FET integrated circuits
CENTURELLI, Francesco;SCOTTI, Giuseppe;TOMMASINO, PASQUALE;TRIFILETTI, Alessandro
2003
Abstract
A new statistical nonlinear model of GaAs FET MMICs which allows the representation of distance-dependent technological parameter variations by means of equivalent circuit parameters, and an automatic extraction procedure, are presented. The capability to reproduce statistical distribution has been successfully checked on S parameters at different distances in the 1–50 GHz frequency range.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
