We present an experimental study of the carrier recombination dynamics in high-quality (InGa)(AsN)/GaAs and Ga(AsN)/GaAs quantum-well structures after picosecond excitation. A comparison among samples with and without nitrogen and with different In concentration shows that nonradiative channels originated in the host matrix [i.e., (InGa)As and GaAs] play a dominant role in the recombination dynamics of these heterostructures. (C) 2003 American Institute of Physics.

Role of the host matrix in the carrier recombination of InGaAsN alloys / A., Vinattieri; D., Alderighi; M., Zamfirescu; M., Colocci; Polimeni, Antonio; Capizzi, Mario; D., Gollub; M., Fischer; A., Forchel. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 82:17(2003), pp. 2805-2807. [10.1063/1.1569983]

Role of the host matrix in the carrier recombination of InGaAsN alloys

POLIMENI, Antonio;CAPIZZI, Mario;
2003

Abstract

We present an experimental study of the carrier recombination dynamics in high-quality (InGa)(AsN)/GaAs and Ga(AsN)/GaAs quantum-well structures after picosecond excitation. A comparison among samples with and without nitrogen and with different In concentration shows that nonradiative channels originated in the host matrix [i.e., (InGa)As and GaAs] play a dominant role in the recombination dynamics of these heterostructures. (C) 2003 American Institute of Physics.
2003
01 Pubblicazione su rivista::01a Articolo in rivista
Role of the host matrix in the carrier recombination of InGaAsN alloys / A., Vinattieri; D., Alderighi; M., Zamfirescu; M., Colocci; Polimeni, Antonio; Capizzi, Mario; D., Gollub; M., Fischer; A., Forchel. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 82:17(2003), pp. 2805-2807. [10.1063/1.1569983]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/248633
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