Exciton confinement in the GaAs barriers of InGaAs/GaAs multiple-quantum-well structures is demonstrated by luminescence self-absorption and photoluminescence excitation spectroscopies. The confinement energy and absorption linewidth depend on the barrier width as predicted by a plain quantum mechanical model. For thin barriers, a splitting in the experimental lineshape is accounted for by including into the theoretical model the interaction among excitons confined in individual barriers. Evidence for a transition between a hole state in the well and an electron state confined in the barrier is also reported, which provides a direct way for estimating the band offsets.

ABOVE BARRIER EXCITON CONFINEMENT IN INGAAS/GAAS MULTIPLE-QUANTUM-WELL STRUCTURES / Capizzi, Mario; Polimeni, Antonio; Frova, Andrea; F., Martelli; K. B., Ozanyan; T., Worren; M. R., Bruni; M. G., Simeone. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 37:4-6(1994), pp. 641-644. ((Intervento presentato al convegno 6th International Conference on Modulated Semiconductor Structures tenutosi a GARMISCH PARTENKIR, GERMANY nel AUG 23-27, 1993 [10.1016/0038-1101(94)90265-8].

ABOVE BARRIER EXCITON CONFINEMENT IN INGAAS/GAAS MULTIPLE-QUANTUM-WELL STRUCTURES

CAPIZZI, Mario;POLIMENI, Antonio;FROVA, Andrea;
1994

Abstract

Exciton confinement in the GaAs barriers of InGaAs/GaAs multiple-quantum-well structures is demonstrated by luminescence self-absorption and photoluminescence excitation spectroscopies. The confinement energy and absorption linewidth depend on the barrier width as predicted by a plain quantum mechanical model. For thin barriers, a splitting in the experimental lineshape is accounted for by including into the theoretical model the interaction among excitons confined in individual barriers. Evidence for a transition between a hole state in the well and an electron state confined in the barrier is also reported, which provides a direct way for estimating the band offsets.
01 Pubblicazione su rivista::01a Articolo in rivista
ABOVE BARRIER EXCITON CONFINEMENT IN INGAAS/GAAS MULTIPLE-QUANTUM-WELL STRUCTURES / Capizzi, Mario; Polimeni, Antonio; Frova, Andrea; F., Martelli; K. B., Ozanyan; T., Worren; M. R., Bruni; M. G., Simeone. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 37:4-6(1994), pp. 641-644. ((Intervento presentato al convegno 6th International Conference on Modulated Semiconductor Structures tenutosi a GARMISCH PARTENKIR, GERMANY nel AUG 23-27, 1993 [10.1016/0038-1101(94)90265-8].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/243355
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