Following the recent low-temperature synthesis of a-Sn nanoparticles on silicon, we report the first experimental results indicating stimulated emission from these nanostructures in the THz range. To enhance the emission, the nanoparticles were integrated into a slot-array antenna with a resonant frequency matched to the nanoparticle bandgap. Transmission spectra were measured using a purpose-designed FTIR setup. A distinct peak in the optical density was observed at a wavelength of approximately 15 um, which can be consistently interpreted as stimulated emission from the nanoparticles. Combined with the fully CMOS-compatible fabrication process, these results highlight the strong potential of this platform for future THz photonic devices.
Stimulated Emission from α-Sn nanoparticles on silicon / Bertoli, T., Nucara, A., Notargiacomo, A., Irrera, F., Pea, M., Polito, R., Logoteta, D., Palma, F.. - (2026). (TANN 2026 Barcellona ) [10.11159/tann26.118].
Stimulated Emission from α-Sn nanoparticles on silicon
Bertoli T.
;Nucara A.;Irrera F.;Logoteta D.;Palma F.
2026
Abstract
Following the recent low-temperature synthesis of a-Sn nanoparticles on silicon, we report the first experimental results indicating stimulated emission from these nanostructures in the THz range. To enhance the emission, the nanoparticles were integrated into a slot-array antenna with a resonant frequency matched to the nanoparticle bandgap. Transmission spectra were measured using a purpose-designed FTIR setup. A distinct peak in the optical density was observed at a wavelength of approximately 15 um, which can be consistently interpreted as stimulated emission from the nanoparticles. Combined with the fully CMOS-compatible fabrication process, these results highlight the strong potential of this platform for future THz photonic devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


