A hysteresis comparator for ultra-low-voltage asynchronous Sigma-Delta Modulators is presented, featuring a regenerative bulk-based SRAM output stage for rail-to-rail operation and enhanced speed. Simulations show a delay of 35.91 μs, power dissipation of 7.27 nW, and a hysteresis threshold of 4.20 mV. The design exhibits strong resilience under PVT and mismatch variations. An analytical hysteresis model, validated through simulation, closely matches observed behavior. Compared to a state-of-the-art solution, the proposed comparator achieves an up to 2 × faster delay, lower power, and more stable hysteresis, making it well-suited for low-power analog applications in IoT and biomedical systems.

A 0.3V hysteresis comparator with bulk-based SRAM output stage / Nicolini, G., Sala, R.D., Scotti, G.. - (2025), pp. 1-4. (20th International Conference on PhD Research in Microelectronics and Electronics, PRIME 2025 Taormina; Italy ) [10.1109/prime66228.2025.11203337].

A 0.3V hysteresis comparator with bulk-based SRAM output stage

Nicolini, Giovanni;Sala, Riccardo Della;Scotti, Giuseppe
2025

Abstract

A hysteresis comparator for ultra-low-voltage asynchronous Sigma-Delta Modulators is presented, featuring a regenerative bulk-based SRAM output stage for rail-to-rail operation and enhanced speed. Simulations show a delay of 35.91 μs, power dissipation of 7.27 nW, and a hysteresis threshold of 4.20 mV. The design exhibits strong resilience under PVT and mismatch variations. An analytical hysteresis model, validated through simulation, closely matches observed behavior. Compared to a state-of-the-art solution, the proposed comparator achieves an up to 2 × faster delay, lower power, and more stable hysteresis, making it well-suited for low-power analog applications in IoT and biomedical systems.
2025
20th International Conference on PhD Research in Microelectronics and Electronics, PRIME 2025
bulk-driven; comparator; hysteresis; SRAM cell; ultra low voltage
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
A 0.3V hysteresis comparator with bulk-based SRAM output stage / Nicolini, G., Sala, R.D., Scotti, G.. - (2025), pp. 1-4. (20th International Conference on PhD Research in Microelectronics and Electronics, PRIME 2025 Taormina; Italy ) [10.1109/prime66228.2025.11203337].
File allegati a questo prodotto
File Dimensione Formato  
Nicolini_A-0.3V-hysteresis_2025.pdf

solo gestori archivio

Tipologia: Versione editoriale (versione pubblicata con il layout dell'editore)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 1.11 MB
Formato Adobe PDF
1.11 MB Adobe PDF   Contatta l'autore

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1771340
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? ND
social impact