A 0.3 V nanowatt CCII− is presented in 0.18 (Formula presented.) m TSMC CMOS, targeting ultra-low-power current-mode interfaces. Post-layout extracted simulations demonstrate correct conveying operation with a total DC power consumption of less than 2.40 nW. The low-frequency tracking factors evaluated at 1 Hz are (Formula presented.) (−0.48 dB) and (Formula presented.) (≈−0.35 dB), with (Formula presented.) dB bandwidths of 22.95 kHz and 63.95 kHz for the voltage and current transfers, respectively. Small-signal extraction confirms the intended impedance profile, yielding (Formula presented.) M (Formula presented.), (Formula presented.) G (Formula presented.), and a very high input resistance (Formula presented.) G (Formula presented.). Robustness is verified through full PVT and mismatch analyses, showing stable functionality across process corners, a 0–80 °C temperature range, and 270–330 mV supply variations while maintaining nanowatt-level dissipation.
A 0.3 V nanowatt bulk-driven CCII− in 0.18-µm CMOS for ultra-low-power current-mode interfaces / Nicolini, G., Passaquieti, A., Scotti, G., Della Sala, R.. - In: JOURNAL OF LOW POWER ELECTRONICS AND APPLICATIONS. - ISSN 2079-9268. - 16:2(2026), pp. 1-18. [10.3390/jlpea16020012]
A 0.3 V nanowatt bulk-driven CCII− in 0.18-µm CMOS for ultra-low-power current-mode interfaces
Nicolini G.Primo
;Scotti G.Secondo
;Della Sala R.Ultimo
2026
Abstract
A 0.3 V nanowatt CCII− is presented in 0.18 (Formula presented.) m TSMC CMOS, targeting ultra-low-power current-mode interfaces. Post-layout extracted simulations demonstrate correct conveying operation with a total DC power consumption of less than 2.40 nW. The low-frequency tracking factors evaluated at 1 Hz are (Formula presented.) (−0.48 dB) and (Formula presented.) (≈−0.35 dB), with (Formula presented.) dB bandwidths of 22.95 kHz and 63.95 kHz for the voltage and current transfers, respectively. Small-signal extraction confirms the intended impedance profile, yielding (Formula presented.) M (Formula presented.), (Formula presented.) G (Formula presented.), and a very high input resistance (Formula presented.) G (Formula presented.). Robustness is verified through full PVT and mismatch analyses, showing stable functionality across process corners, a 0–80 °C temperature range, and 270–330 mV supply variations while maintaining nanowatt-level dissipation.| File | Dimensione | Formato | |
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Nicolini_A 0.3 V Nanowatt_2026.pdf
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