Strained silicon Technology: Non-destructive nanoscale characterization through Tip-Enhanced Raman Spectroscopy

In recent years, strained silicon is emerging as a key solution for integrated circuits, using biaxial tensile stress to enhance charge carrier mobility [1]. In the search for faster, non-destructive nano-characterisation techniques for strain monitoring in semiconductor manufacturing, tip-enhanced Raman spectroscopy (TERS) was presented as an ideal choice [2]. In this study also the innovative titanium nitride (TiN) AFM probe, which allows clean room implementation for in-line characterisation, was used. The results highlight TERS as a powerful tool for monitoring the quality of semiconductor production lines, with unprecedented resolution and speed. This research advances tip-enhanced Raman spectroscopy to Technology Readiness Level 6, highlighting its transformative impact on semiconductor manufacturing quality control. [1] P. Dobrosz et all, Surface and Coatings Technology, 2005, 200, 1755–1760. [2] N.Hayazawa et al., Nanosensing Materials Devices, and Systems III, 2007, 6769.