This work reports on the carrier mobilities in heavily doped, pseudomorphically grown Ge 1-x Sn x -epilayers with Sn-concentrations up to 9.2%. For this purpose, Ge 1-x Sn x -alloys were grown on a relaxed Ge virtual substrate on top of a commercial Si (100) wafer using molecular beam epitaxy. The crystal structure and quality of the Ge 1-x Sn x -epilayers were analyzed by high-resolution X-ray diffraction. In order to extract the carrier mobilities in Ge 1-x Sn x , low temperature hall measurements were carried out, using a Van-der-Pauw-geometry. It is shown that with increasing Sn-concentration we find a decrease in carrier mobility, which corresponds to an increasing sheet resistance.
Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers / Dettling, M. M.; Weisshaupt, D.; Funk, H. S.; Kern, M.; Berkmann, F.; Clausen, C.; Oehme, M.; Schwarz, D.; Slageren, J. v.; Schulze, J.. - (2020), pp. 17-21. (Intervento presentato al convegno 2020 43rd International convention on information, communication and electronic technology (MIPRO) information, communication and electronic technology (MIPRO), 2020 43rd tenutosi a Opatija, Croatia) [10.23919/MIPRO48935.2020.9245273].
Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers
Berkmann, F.;
2020
Abstract
This work reports on the carrier mobilities in heavily doped, pseudomorphically grown Ge 1-x Sn x -epilayers with Sn-concentrations up to 9.2%. For this purpose, Ge 1-x Sn x -alloys were grown on a relaxed Ge virtual substrate on top of a commercial Si (100) wafer using molecular beam epitaxy. The crystal structure and quality of the Ge 1-x Sn x -epilayers were analyzed by high-resolution X-ray diffraction. In order to extract the carrier mobilities in Ge 1-x Sn x , low temperature hall measurements were carried out, using a Van-der-Pauw-geometry. It is shown that with increasing Sn-concentration we find a decrease in carrier mobility, which corresponds to an increasing sheet resistance.File | Dimensione | Formato | |
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