BERKMANN, FRITZ
BERKMANN, FRITZ
DIPARTIMENTO DI FISICA
A mid-infrared laser microscope for the time-resolved study of light-induced protein conformational changes
2023 Temperini, Me; Polito, R; Intze, A; Gillibert, R; Berkmann, F; Baldassarre, L; Giliberti, V; Ortolani, M
Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers
2020 Dettling, M. M.; Weisshaupt, D.; Funk, H. S.; Kern, M.; Berkmann, F.; Clausen, C.; Oehme, M.; Schwarz, D.; Slageren, J. v.; Schulze, J.
Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures
2021 Seidel, L.; Schwarz, D.; Oehme, M.; Causevic, A.; Funk, H. S.; Weibhaupt, D.; Berkmann, F.; Schulze, J.
Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si
2022 Elogail, Yasmine; Berkmann, Fritz; Clausen, Caterina J.; Fischer, Inga A.; H??nel, Linda A.; Schwarz, Daniel; Schulze, J??rg
Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates
2018 Berkmann, F.; Augel, L.; Schilling, M. B.; Berrier, A.; Schwarz, D.; Weishaupt, D.; Oehme, M.; Schulze, J.; Fischer, I. A.
Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source
2022 Berkmann, Fritz; Augel, Lion; Hack, Michael; Kawaguchi, Yuma; Weishaupt, David; Fischer, Inga A.; Schulze, Jorg
Optofluidic sensor system with Ge PIN photodetector for CMOS-compatible sensing
2017 Augel, L.; Berkmann, F.; Latta, D.; Fischer, I. A.; Bechler, S.; Elogail, Y.; Kostecki, K.; Potje-Kamloth, K.; Schulze, J.
Plasmonic gratings from highly doped Ge1-y Sn yfilms on Si
2021 Berkmann, F.; Ayasse, M.; Schlipf, J.; Morz, F.; Weisshaupt, D.; Oehme, M.; Prucnal, S.; Kawaguchi, Y.; Schwarz, D.; Fischer, I. A.; Schulze, J.
Plasmonics-integrated Ge PIN-photodetectors
2019 Fischer, I. A.; Augel, L.; Berkmann, F.; Kawaguchi, Y.; Schlif, J.; Schutze, J.
Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors
2023 Schlipf, J.; Berkmann, F.; Yamamoto, Y.; Reichenbach, M.; Veleski, M.; Kawaguchi, Y.; Mörz, F.; Tomm, J. W.; Weißhaupt, D.; Fischer, I. A.
Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx
2023 Berkmann, F.; Steuer, O.; Ganss, F.; Prucnal, S.; Schwarz, D.; Fischer, I. A.; Schulze, J.
Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy
2021 Sigle, E.; Weishaupt, D.; Oehme, M.; Funk, H. S.; Schwarz, D.; Berkmann, F.; Schulze, J.
Titanium and Nickel as alternative materials for mid Infrared Plasmonic
2021 Berkmann, F.; Ayasse, M.; Morz, F.; Fischer, I. A.; Schulze, J.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A mid-infrared laser microscope for the time-resolved study of light-induced protein conformational changes | 2023 | Temperini, Me; Polito, R; Intze, A; Gillibert, R; Berkmann, F; Baldassarre, L; Giliberti, V; Ortolani, M | |
| Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers | 2020 | Dettling, M. M.; Weisshaupt, D.; Funk, H. S.; Kern, M.; Berkmann, F.; Clausen, C.; Oehme, M.; Schwarz, D.; Slageren, J. v.; Schulze, J. | |
| Electrical Characterization of SiGeSn/Ge/GeSn-pin-Heterodiodes at Low Temperatures | 2021 | Seidel, L.; Schwarz, D.; Oehme, M.; Causevic, A.; Funk, H. S.; Weibhaupt, D.; Berkmann, F.; Schulze, J. | |
| Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si | 2022 | Elogail, Yasmine; Berkmann, Fritz; Clausen, Caterina J.; Fischer, Inga A.; H??nel, Linda A.; Schwarz, Daniel; Schulze, J??rg | |
| Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates | 2018 | Berkmann, F.; Augel, L.; Schilling, M. B.; Berrier, A.; Schwarz, D.; Weishaupt, D.; Oehme, M.; Schulze, J.; Fischer, I. A. | |
| Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source | 2022 | Berkmann, Fritz; Augel, Lion; Hack, Michael; Kawaguchi, Yuma; Weishaupt, David; Fischer, Inga A.; Schulze, Jorg | |
| Optofluidic sensor system with Ge PIN photodetector for CMOS-compatible sensing | 2017 | Augel, L.; Berkmann, F.; Latta, D.; Fischer, I. A.; Bechler, S.; Elogail, Y.; Kostecki, K.; Potje-Kamloth, K.; Schulze, J. | |
| Plasmonic gratings from highly doped Ge1-y Sn yfilms on Si | 2021 | Berkmann, F.; Ayasse, M.; Schlipf, J.; Morz, F.; Weisshaupt, D.; Oehme, M.; Prucnal, S.; Kawaguchi, Y.; Schwarz, D.; Fischer, I. A.; Schulze, J. | |
| Plasmonics-integrated Ge PIN-photodetectors | 2019 | Fischer, I. A.; Augel, L.; Berkmann, F.; Kawaguchi, Y.; Schlif, J.; Schutze, J. | |
| Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors | 2023 | Schlipf, J.; Berkmann, F.; Yamamoto, Y.; Reichenbach, M.; Veleski, M.; Kawaguchi, Y.; Mörz, F.; Tomm, J. W.; Weißhaupt, D.; Fischer, I. A. | |
| Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx | 2023 | Berkmann, F.; Steuer, O.; Ganss, F.; Prucnal, S.; Schwarz, D.; Fischer, I. A.; Schulze, J. | |
| Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy | 2021 | Sigle, E.; Weishaupt, D.; Oehme, M.; Funk, H. S.; Schwarz, D.; Berkmann, F.; Schulze, J. | |
| Titanium and Nickel as alternative materials for mid Infrared Plasmonic | 2021 | Berkmann, F.; Ayasse, M.; Morz, F.; Fischer, I. A.; Schulze, J. |