We have used far-infrared absorption to probe the optical conductivity of metallic GaAs:Si sheets imbedded in GaAs by molecular-beam epitaxy. An enhancement of the conductivity is observed at short length scales which we attribute to localization and Coulomb-interaction effects. However, the spectra do not appear to be quantitatively described by existing theories for long length scales. © 1986 The American Physical Society.

SHORT-LENGTH-SCALE CONDUCTIVITY ENHANCEMENT IN A SUPERLATTICE / H. K., Ng; Capizzi, Mario; G. A., Thomas; R. N., Bhatt; A. C., Gossard. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 33:10(1986), pp. 7329-7331. [10.1103/physrevb.33.7329]

SHORT-LENGTH-SCALE CONDUCTIVITY ENHANCEMENT IN A SUPERLATTICE

CAPIZZI, Mario;
1986

Abstract

We have used far-infrared absorption to probe the optical conductivity of metallic GaAs:Si sheets imbedded in GaAs by molecular-beam epitaxy. An enhancement of the conductivity is observed at short length scales which we attribute to localization and Coulomb-interaction effects. However, the spectra do not appear to be quantitatively described by existing theories for long length scales. © 1986 The American Physical Society.
1986
01 Pubblicazione su rivista::01a Articolo in rivista
SHORT-LENGTH-SCALE CONDUCTIVITY ENHANCEMENT IN A SUPERLATTICE / H. K., Ng; Capizzi, Mario; G. A., Thomas; R. N., Bhatt; A. C., Gossard. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 33:10(1986), pp. 7329-7331. [10.1103/physrevb.33.7329]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/16674
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