Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E-Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary characterization by standard 2-port Network Analyzer. Amplifiers have been prototyped in a SiGe BiCMOS commercial technology, and exhibit about 22 dB of gain control range. After balun de-embedding, more than 10 dB of maximum gain has been also demonstrated for both amplifiers.
Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology / Amendola, G.; Boccia, L.; Centurelli, F.; Ciccognani, W.; Limiti, E.; Mustacchio, C.; Tommasino, P.; Trifiletti, A.. - (2022), pp. 1-4. (Intervento presentato al convegno MMS 22 Mediterranean Microwave Symposium tenutosi a Pizzo Calabro) [10.1109/MMS55062.2022.9825549].
Characterization-oriented design of E-band Variable-Gain Amplifiers in BiCMOS technology
Centurelli F.;Tommasino P.;Trifiletti A.
2022
Abstract
Design and characterization of both a single-stage and a 2-stage Variable Gain Amplifier operating at E-Band is presented. Characterization issues of differential RF amplifiers are discussed, and integrated input and output baluns seem to be an easy solution for on-chip or on-board preliminary characterization by standard 2-port Network Analyzer. Amplifiers have been prototyped in a SiGe BiCMOS commercial technology, and exhibit about 22 dB of gain control range. After balun de-embedding, more than 10 dB of maximum gain has been also demonstrated for both amplifiers.File | Dimensione | Formato | |
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