Millimeter-wave backhauling links are of primary importance in the architecture of 5G telecommunication systems. Their implementation demands highly integrated front-end chips capable of fully exploiting the most advanced semiconductor technologies' capabilities. This work reports the design and experimental validation of several fundamental building blocks of D- and E-band backhauling front-ends implemented using 55-nm SiGe BiCMOS semiconductor technology. Results include an E-band I-Q receiver, a frequency synthesizer, two D-band amplifiers and, a D-band power amplifier.
SiGe BiCMOS building blocks for E- and D-band backhauling front-ends / Amendola, G., Boccia, L., Centurelli, F., Chevalier, P., Fonte, A., Karman, S., Levantino, S., Mazzanti, A., Mustacchio, C., Pallotta, A., Petricli, I., Samori, C., Tesolin, F., Tommasino, P., Traversa, A., Trifiletti, A.. - (2022), pp. 113-116. (2021 16th European Microwave Integrated Circuits Conference (EuMIC) London (UK) ) [10.23919/EuMIC50153.2022.9783703].
SiGe BiCMOS building blocks for E- and D-band backhauling front-ends
Centurelli, F.;Tommasino, P.;Trifiletti, A.
2022
Abstract
Millimeter-wave backhauling links are of primary importance in the architecture of 5G telecommunication systems. Their implementation demands highly integrated front-end chips capable of fully exploiting the most advanced semiconductor technologies' capabilities. This work reports the design and experimental validation of several fundamental building blocks of D- and E-band backhauling front-ends implemented using 55-nm SiGe BiCMOS semiconductor technology. Results include an E-band I-Q receiver, a frequency synthesizer, two D-band amplifiers and, a D-band power amplifier.| File | Dimensione | Formato | |
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