Quality aware selective ECC for approximate DRAM

Approximate DRAMs are DRAM memories where energy saving techniques have been implemented by trading off bit-cell error rate with power consumption. They are considered part of the building blocks in the larger area of approximate computing. Relaxing refresh rate has been proposed as an interesting solution to achieve better efficiency at the expense of rising error rate. However, some works have demonstrated that much better results are achieved if at word-level some bits are retained without errors (i.e. their cells are refreshed at nominal rate), resulting in architectures using multiple refresh rates. In this paper we present a technique that can be applied to approximate DRAMs under reduced refresh rate. It allows to trim error rate at word-level, while still performing the refresh operation at the same rate for all cells. The number of bits that are protected is configurable and depends on output quality degradation that can be accepted by the application.