We present a systematic investigation of the electronic properties of bulk and few layer ReS2 van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by similar to 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Boltzmann) distribution of excitons, indicating the hot nature of the emission. While DFT calculations predict bilayer ReS2 to have a direct fundamental band gap, our optical data suggests that the fundamental gap is indirect in all cases.
Non equilibrium anisotropic excitons in atomically thin ReS2 / Urban, Jm; Baranowski, M; Kuc, A; Klopotowski, L; Surrente, A; Ma, Y; Wlodarczyk, D; Suchocki, A; Ovchinnikov, D; Heine, T; Maude, Dk; Kis, A; Plochocka, P. - In: 2D MATERIALS. - ISSN 2053-1583. - 6:1(2019). [10.1088/2053-1583/aae9b9]
Non equilibrium anisotropic excitons in atomically thin ReS2
Surrente A;
2019
Abstract
We present a systematic investigation of the electronic properties of bulk and few layer ReS2 van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by similar to 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Boltzmann) distribution of excitons, indicating the hot nature of the emission. While DFT calculations predict bilayer ReS2 to have a direct fundamental band gap, our optical data suggests that the fundamental gap is indirect in all cases.File | Dimensione | Formato | |
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