High frequency detection based on MOS-FET technology was long justified using a mechanism described by the plasma wave detection theory. In this paper we propose a new model based on the self-mixing process, taking place not in the channel, but in the depleted portion of the transistor body. Hydrodynamic semiconductor equations are solved in the small signal approximation. As a result, we present the dependence of the rectified voltage on the bias gate voltage, which fits carefully several experimental literature results.
Terahertz detection in MOS-FET: a new model by the self-mixing / Palma, F; Rao, R. - 2018:(2018), pp. 1-3. (Intervento presentato al convegno 43rd International conference on infrared, millimeter, and terahertz waves, IRMMW-THz 2018 tenutosi a Nagoya; Japan) [10.1109/IRMMW-THz.2018.8510162].
Terahertz detection in MOS-FET: a new model by the self-mixing
Palma, F;Rao, R
2018
Abstract
High frequency detection based on MOS-FET technology was long justified using a mechanism described by the plasma wave detection theory. In this paper we propose a new model based on the self-mixing process, taking place not in the channel, but in the depleted portion of the transistor body. Hydrodynamic semiconductor equations are solved in the small signal approximation. As a result, we present the dependence of the rectified voltage on the bias gate voltage, which fits carefully several experimental literature results.File | Dimensione | Formato | |
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