The low power instrumentation amplifier (IA) presented in this paper has been designed to be the front-end of an integrated neural recording system, in which common-mode rejection ratio (CMRR), input referred noise and power consumption are critical requirements. The proposed IA topology exploits a differential-difference amplifier (DDA) whose differential output current drives a fully differential, high-resistance, transimpedance stage, with an embedded common-mode feedback loop to increase the CMRR. This stage is followed by a differential-to-single-ended output amplifier. Low-power operation has been achieved by exploiting sub-threshold operation of MOS transistors and adopting a supply voltage of 1 V. Simulation results in a commercial 65 nm CMOS technology show a 1 Hz to 5 kHz bandwidth, a CMRR higher than 120 dB, an input referred noise of 8.1 μVrms and a power consumption of 1.12 μW.
Low power DDA-based instrumentation amplifier for neural recording applications in 65 nm CMOS / Avoli, Matteo; Centurelli, Francesco; Monsurrò, Pietro; Scotti, Giuseppe; Trifiletti, Alessandro. - In: AEÜ. INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS. - ISSN 1434-8411. - ELETTRONICO. - 92:(2018), pp. 30-35. [10.1016/j.aeue.2018.05.014]
Low power DDA-based instrumentation amplifier for neural recording applications in 65 nm CMOS
Centurelli, Francesco;Monsurrò, Pietro;Scotti, Giuseppe
;Trifiletti, Alessandro
2018
Abstract
The low power instrumentation amplifier (IA) presented in this paper has been designed to be the front-end of an integrated neural recording system, in which common-mode rejection ratio (CMRR), input referred noise and power consumption are critical requirements. The proposed IA topology exploits a differential-difference amplifier (DDA) whose differential output current drives a fully differential, high-resistance, transimpedance stage, with an embedded common-mode feedback loop to increase the CMRR. This stage is followed by a differential-to-single-ended output amplifier. Low-power operation has been achieved by exploiting sub-threshold operation of MOS transistors and adopting a supply voltage of 1 V. Simulation results in a commercial 65 nm CMOS technology show a 1 Hz to 5 kHz bandwidth, a CMRR higher than 120 dB, an input referred noise of 8.1 μVrms and a power consumption of 1.12 μW.File | Dimensione | Formato | |
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