The electron effective mass, me, has been determined by magneto-photoluminescence in as-grown and hydrogenated GaAs1-xNx samples for a wide range of nitrogen concentrations (from x<0.01% to x=1.78%). A modified k?p model, which takes into account hybridization effects between N cluster states and the conduction band edge, reproduces quantitatively the experimental me values up to x ? 0.6%. Experimental and theoretical evidence is provided of the N complexes responsible for the non-monotonic and initially puzzling compositional dependence of the electron mass.

Interaction between conduction band edge and nitrogen states probed by carrier effective mass measurements in GaAs1-xNx / Masia, Francesco; Pettinari, Giorgio; Polimeni, Antonio; Felici, Marco; Miriametro, Antonio; Capizzi, Mario; Lindsay, A.; Healy, S. B.; O’Reilly, E. P.; Cristofoli, A.; Bais, G.; Piccin, M.; Rubini, S.; Martelli, F.; Franciosi, A.; Klar, P. J.; Volz, K.; Stolz, W.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1550-235X. - STAMPA. - 73:(2006), pp. 073201-1-073201-4. [10.1103/PhysRevB.73.073201]

Interaction between conduction band edge and nitrogen states probed by carrier effective mass measurements in GaAs1-xNx

MASIA, Francesco;PETTINARI, GIORGIO;POLIMENI, Antonio;FELICI, Marco;MIRIAMETRO, Antonio;CAPIZZI, Mario;
2006

Abstract

The electron effective mass, me, has been determined by magneto-photoluminescence in as-grown and hydrogenated GaAs1-xNx samples for a wide range of nitrogen concentrations (from x<0.01% to x=1.78%). A modified k?p model, which takes into account hybridization effects between N cluster states and the conduction band edge, reproduces quantitatively the experimental me values up to x ? 0.6%. Experimental and theoretical evidence is provided of the N complexes responsible for the non-monotonic and initially puzzling compositional dependence of the electron mass.
2006
.
01 Pubblicazione su rivista::01a Articolo in rivista
Interaction between conduction band edge and nitrogen states probed by carrier effective mass measurements in GaAs1-xNx / Masia, Francesco; Pettinari, Giorgio; Polimeni, Antonio; Felici, Marco; Miriametro, Antonio; Capizzi, Mario; Lindsay, A.; Healy, S. B.; O’Reilly, E. P.; Cristofoli, A.; Bais, G.; Piccin, M.; Rubini, S.; Martelli, F.; Franciosi, A.; Klar, P. J.; Volz, K.; Stolz, W.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1550-235X. - STAMPA. - 73:(2006), pp. 073201-1-073201-4. [10.1103/PhysRevB.73.073201]
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/101163
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 123
  • ???jsp.display-item.citation.isi??? 113
social impact