In a-Si:H/c-Si heterojunction solar cells the UV absorption of amorphous layers limits the current generation. The use of a more transparent material like a-SiOx:H films is a key to further enhance the efficiency of this kind of cells. At the same time this layer must guarantee high surface passivation of the c-Si wafer to be suitable in high efficiency solar cell manufacturing. As for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In order to avoid damages of the amorphous layer, each cell fabrication step should be carried at temperature lower than the emitter formation one. However, when thermal annealing is applied as one of the early fabrication step, the temperature can be high enough to obtain the best passivation properties. In this work we have analyzed the effect of several thermal treatments different for temperature, duration and surrounding atmosphere on a-SiOx:H/c-Si/a-SiOx:H structure. We have fully characterized the samples with the aid of effective lifetime evaluation and FTIR spectra to correlate the effect of thermal annealing to the a-SiOx:H/c-Si interface.

Optimal thermal annealing of a-SiOx layer obtained by pecvd for Heterojunction solar cell application

MARTINI, LUCA;SERENELLI, LUCA;ASQUINI, Rita;
2016

Abstract

In a-Si:H/c-Si heterojunction solar cells the UV absorption of amorphous layers limits the current generation. The use of a more transparent material like a-SiOx:H films is a key to further enhance the efficiency of this kind of cells. At the same time this layer must guarantee high surface passivation of the c-Si wafer to be suitable in high efficiency solar cell manufacturing. As for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In order to avoid damages of the amorphous layer, each cell fabrication step should be carried at temperature lower than the emitter formation one. However, when thermal annealing is applied as one of the early fabrication step, the temperature can be high enough to obtain the best passivation properties. In this work we have analyzed the effect of several thermal treatments different for temperature, duration and surrounding atmosphere on a-SiOx:H/c-Si/a-SiOx:H structure. We have fully characterized the samples with the aid of effective lifetime evaluation and FTIR spectra to correlate the effect of thermal annealing to the a-SiOx:H/c-Si interface.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/972752
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