In this work we explore the reliability of the c-Si surface passivation provided by a-SiOx:H thin film layers under UV exposition, in combination with thermal annealing treatments. Both p-and n-type doped c-Si substrates have been considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime together with Si-H and Si-O bonding, detected by FTIR spectra measurements, carried out after different exposure times.

Stability investigation of a-SiOx:H thin films layer passivation properties for heterojunction solar cell / Martini, Luca; Serenelli, Luca; Asquini, Rita; Tucci, Mario. - ELETTRONICO. - (2016), pp. 185-186. ((Intervento presentato al convegno 48th Annual Meeting of the Associazione Gruppo Italiano di Elettronica (GE) tenutosi a Brescia nel June 22-24, 2016.

Stability investigation of a-SiOx:H thin films layer passivation properties for heterojunction solar cell

MARTINI, LUCA;SERENELLI, LUCA;ASQUINI, Rita;
2016

Abstract

In this work we explore the reliability of the c-Si surface passivation provided by a-SiOx:H thin film layers under UV exposition, in combination with thermal annealing treatments. Both p-and n-type doped c-Si substrates have been considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime together with Si-H and Si-O bonding, detected by FTIR spectra measurements, carried out after different exposure times.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11573/972726
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