The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LaAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements show that the Rashba coupling constant increases linearly with the interfacial electric field. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.

Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO<inf>3</inf>/SrTiO<inf>3</inf> devices / Hurand, S; Jouan, A.; Feuillet Palma, C.; Singh, G.; Biscaras, J.; Lesne, E.; Reyren, N.; Barthélémy, A.; Bibes, M.; Villegas, J. E.; Ulysse, C.; Lafosse, X.; Pannetier Lecoeur, M.; Caprara, Sergio; Grilli, Marco; Lesueur, J.; Bergeal, N.. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - STAMPA. - 5:1(2015), pp. 127511-127519. [10.1038/srep12751]

Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO3/SrTiO3 devices

CAPRARA, SERGIO;GRILLI, Marco;
2015

Abstract

The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the discovery of two-dimensional electron gases (2-DEGs) at LaAlO3/SrTiO3 interfaces, which exhibit both superconductivity and strong Rashba spin-orbit coupling (SOC), represents a major breakthrough. Here, we report on the realisation of a field-effect LaAlO3/SrTiO3 device, whose physical properties, including superconductivity and SOC, can be tuned over a wide range by a top-gate voltage. We derive a phase diagram, which emphasises a field-effect-induced superconductor-to-insulator quantum phase transition. Magneto-transport measurements show that the Rashba coupling constant increases linearly with the interfacial electric field. Our results pave the way for the realisation of mesoscopic devices, where these two properties can be manipulated on a local scale by means of top-gates.
2015
Multidisciplinary
01 Pubblicazione su rivista::01a Articolo in rivista
Field-effect control of superconductivity and Rashba spin-orbit coupling in top-gated LaAlO<inf>3</inf>/SrTiO<inf>3</inf> devices / Hurand, S; Jouan, A.; Feuillet Palma, C.; Singh, G.; Biscaras, J.; Lesne, E.; Reyren, N.; Barthélémy, A.; Bibes, M.; Villegas, J. E.; Ulysse, C.; Lafosse, X.; Pannetier Lecoeur, M.; Caprara, Sergio; Grilli, Marco; Lesueur, J.; Bergeal, N.. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - STAMPA. - 5:1(2015), pp. 127511-127519. [10.1038/srep12751]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/940617
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