In this work, a statistical process control method is presented showing the accuracy and the reliability obtained with of PMMA E-resist AR-P 672, using an Elphy Quantum Electron Beam Lithography module integrated on a FE-SEM Zeiss Auriga instrument. Reproducible nanostructures with an high aspect ratio between e-resist thickness and width of written geometric structure are shown. Detailed investigation of geometry features are investigated with dimension in the range of 200nm to 1-m. The adopted method will show how tuning the Area Dose factor and the PMMA thickness it was possible to determine the correct and reproducible parameters that allows to obtain well defined electron-beam features with a 4:1 aspect ratio. Such high aspect ratio opens the possibility to realize an electron-beam lithography lift-off process by using a standard e-beam resist. © 2016 Author(s).

Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography / Veroli, Andrea; Mura, Francesco; Balucani, Marco; Caminiti, Ruggero. - STAMPA. - 1749:(2016), pp. 020010-1-020010-8. ((Intervento presentato al convegno NANOITALY 2015 tenutosi a Rome; Italy nel 21 September 2015 - 24 September 2015 [10.1063/1.4954493].

Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

VEROLI, ANDREA;MURA, FRANCESCO;BALUCANI, Marco;CAMINITI, Ruggero
2016

Abstract

In this work, a statistical process control method is presented showing the accuracy and the reliability obtained with of PMMA E-resist AR-P 672, using an Elphy Quantum Electron Beam Lithography module integrated on a FE-SEM Zeiss Auriga instrument. Reproducible nanostructures with an high aspect ratio between e-resist thickness and width of written geometric structure are shown. Detailed investigation of geometry features are investigated with dimension in the range of 200nm to 1-m. The adopted method will show how tuning the Area Dose factor and the PMMA thickness it was possible to determine the correct and reproducible parameters that allows to obtain well defined electron-beam features with a 4:1 aspect ratio. Such high aspect ratio opens the possibility to realize an electron-beam lithography lift-off process by using a standard e-beam resist. © 2016 Author(s).
NANOITALY 2015
Electron beams; nanolithography; microstructure fabrication; nanostructures; process monitoring and control
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography / Veroli, Andrea; Mura, Francesco; Balucani, Marco; Caminiti, Ruggero. - STAMPA. - 1749:(2016), pp. 020010-1-020010-8. ((Intervento presentato al convegno NANOITALY 2015 tenutosi a Rome; Italy nel 21 September 2015 - 24 September 2015 [10.1063/1.4954493].
File allegati a questo prodotto
File Dimensione Formato  
Veroli_Dose-influence_2016.pdf

accesso aperto

Tipologia: Versione editoriale (versione pubblicata con il layout dell'editore)
Licenza: Creative commons
Dimensione 3.06 MB
Formato Adobe PDF
3.06 MB Adobe PDF Visualizza/Apri PDF

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/898213
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 7
social impact