We studied the second order optical nonlinearity of aluminum nitride films grown by sputtering onto silicon substrates. The crystalline properties of the films were investigated by x-ray diffraction measurements. Preliminary linear optical characterization of the films was carried out by spectrophotometric optical reflectance measurements at different incidence angles; thus the dispersion laws for both ordinary and extraordinary refractive indices were retrieved. Finally, second harmonic generation measurements in reflection mode were performed at a fixed angle from a fundamental beam provided by a picosecond Ti:sapphire laser system at =800 nm. In the experiments a high blue light conversion efficiency was found for samples 1.5 and 2 m thick, and the second order nonlinear coefficient d33=11±1 pm/V was found.
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|Titolo:||Blue second harmonic generation from aluminum nitride films deposited onto silicon by sputtering technique|
|Data di pubblicazione:||2006|
|Citazione:||Blue second harmonic generation from aluminum nitride films deposited onto silicon by sputtering technique / Larciprete, Maria Cristina; Bosco, A.; Belardini, Alessandro; LI VOTI, Roberto; Leahu, Grigore; Sibilia, Concetta; Fazio, Eugenio; Ostuni, R.; Bertolotti, Mario; Passaseo, A.; Poti', BIANCA MARIA; DEL PRETE, Zaccaria. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - ELETTRONICO. - 100:2(2006), pp. 023507-023511.|
|Appartiene alla tipologia:||01a Articolo in rivista|