We studied the second order optical nonlinearity of aluminum nitride films grown by sputtering onto silicon substrates. The crystalline properties of the films were investigated by x-ray diffraction measurements. Preliminary linear optical characterization of the films was carried out by spectrophotometric optical reflectance measurements at different incidence angles; thus the dispersion laws for both ordinary and extraordinary refractive indices were retrieved. Finally, second harmonic generation measurements in reflection mode were performed at a fixed angle from a fundamental beam provided by a picosecond Ti:sapphire laser system at =800 nm. In the experiments a high blue light conversion efficiency was found for samples 1.5 and 2 m thick, and the second order nonlinear coefficient d33=11±1 pm/V was found.

Blue second harmonic generation from aluminum nitride films deposited onto silicon by sputtering technique / Larciprete, Maria Cristina; Bosco, A.; Belardini, Alessandro; LI VOTI, Roberto; Leahu, Grigore; Sibilia, Concetta; Fazio, Eugenio; Ostuni, R.; Bertolotti, Mario; Passaseo, A.; Poti', BIANCA MARIA; DEL PRETE, Zaccaria. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - ELETTRONICO. - 100:2(2006), pp. 023507-023511. [10.1063/1.2219151]

Blue second harmonic generation from aluminum nitride films deposited onto silicon by sputtering technique

LARCIPRETE, Maria Cristina;BELARDINI, ALESSANDRO;LI VOTI, Roberto;LEAHU, GRIGORE;SIBILIA, Concetta;FAZIO, Eugenio;BERTOLOTTI, Mario;POTI', BIANCA MARIA;DEL PRETE, Zaccaria
2006

Abstract

We studied the second order optical nonlinearity of aluminum nitride films grown by sputtering onto silicon substrates. The crystalline properties of the films were investigated by x-ray diffraction measurements. Preliminary linear optical characterization of the films was carried out by spectrophotometric optical reflectance measurements at different incidence angles; thus the dispersion laws for both ordinary and extraordinary refractive indices were retrieved. Finally, second harmonic generation measurements in reflection mode were performed at a fixed angle from a fundamental beam provided by a picosecond Ti:sapphire laser system at =800 nm. In the experiments a high blue light conversion efficiency was found for samples 1.5 and 2 m thick, and the second order nonlinear coefficient d33=11±1 pm/V was found.
2006
Physics and Astronomy (miscellaneous); Physics and Astronomy (all)
01 Pubblicazione su rivista::01a Articolo in rivista
Blue second harmonic generation from aluminum nitride films deposited onto silicon by sputtering technique / Larciprete, Maria Cristina; Bosco, A.; Belardini, Alessandro; LI VOTI, Roberto; Leahu, Grigore; Sibilia, Concetta; Fazio, Eugenio; Ostuni, R.; Bertolotti, Mario; Passaseo, A.; Poti', BIANCA MARIA; DEL PRETE, Zaccaria. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - ELETTRONICO. - 100:2(2006), pp. 023507-023511. [10.1063/1.2219151]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/881115
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