We show the controlled transfer of thin films of different metallic materials to a receiving substrate. Single pulses from a mode locked (40ps pulse), frequency-doubled Nd:YAG laser (energy flux approximate to 13J/cm2 at 532nm) were used. Receiving substrates (metals, semiconductors or crystals) were placed parallel, at a close proximity to the thin film. Optical and scanning electron microscopy (SEM) as well as EDAX analysis were performed, showing evidence of the production of micrometric scale patterns. In particular, we studied the transfer of precious metal to metal/crystals for possible application in the jewellery industry.
Laser-induced forward transfer (LIFT) of material using ablation of thin films / Tarazi, Saad Al; Batani, Dimitri; Hadithi, Yas Al; Jafer, Rashida; Antonelli, Luca; Vodopivec, Bruno; Vitobello, Marialuisa; Iqbal, Munawar. - In: RADIATION EFFECTS AND DEFECTS IN SOLIDS. - ISSN 1042-0150. - ELETTRONICO. - 165:6-10(2010), pp. 501-508. [10.1080/10420151003722511]
Laser-induced forward transfer (LIFT) of material using ablation of thin films
ANTONELLI, LUCA;
2010
Abstract
We show the controlled transfer of thin films of different metallic materials to a receiving substrate. Single pulses from a mode locked (40ps pulse), frequency-doubled Nd:YAG laser (energy flux approximate to 13J/cm2 at 532nm) were used. Receiving substrates (metals, semiconductors or crystals) were placed parallel, at a close proximity to the thin film. Optical and scanning electron microscopy (SEM) as well as EDAX analysis were performed, showing evidence of the production of micrometric scale patterns. In particular, we studied the transfer of precious metal to metal/crystals for possible application in the jewellery industry.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
