Silicon, arguably the most important technological semiconductor, is predicted to exhibit a range of new and interesting properties when grown in the hexagonal crystal structure. To obtain pure hexagonal silicon is a great challenge because it naturally crystallizes in the cubic structure. Here, we demonstrate the fabrication of pure and stable hexagonal silicon evidenced by structural characterization. In our approach, we transfer the hexagonal crystal structure from a template hexagonal gallium phosphide nanowire to an epitaxially grown silicon shell, such that hexagonal silicon is formed. The typical ABABAB... stacking of the hexagonal structure is shown by aberration-corrected imaging in transmission electron microscopy. In addition, X-ray diffraction measurements show the high crystalline purity of the material. We show that this material is stable up to 9 GPa pressure. With this development, we open the way for exploring its optical, electrical, superconducting, and mechanical properties.

Hexagonal Silicon Realized / Hauge, Håkon Ikaros T; Verheijen, Marcel A.; Conesa Boj, Sonia; Etzelstorfer, Tanja; Watzinger, Marc; Kriegner, Dominik; Zardo, Ilaria; Fasolato, Claudia; Capitani, Francesco; Postorino, Paolo; Kölling, Sebastian; Li, Ang; Assali, Simone; Stangl, Julian; Bakkers, Erik P. A. M.. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 15:9(2015), pp. 5855-5860. [10.1021/acs.nanolett.5b01939]

Hexagonal Silicon Realized

FASOLATO, CLAUDIA;CAPITANI, FRANCESCO;POSTORINO, Paolo;
2015

Abstract

Silicon, arguably the most important technological semiconductor, is predicted to exhibit a range of new and interesting properties when grown in the hexagonal crystal structure. To obtain pure hexagonal silicon is a great challenge because it naturally crystallizes in the cubic structure. Here, we demonstrate the fabrication of pure and stable hexagonal silicon evidenced by structural characterization. In our approach, we transfer the hexagonal crystal structure from a template hexagonal gallium phosphide nanowire to an epitaxially grown silicon shell, such that hexagonal silicon is formed. The typical ABABAB... stacking of the hexagonal structure is shown by aberration-corrected imaging in transmission electron microscopy. In addition, X-ray diffraction measurements show the high crystalline purity of the material. We show that this material is stable up to 9 GPa pressure. With this development, we open the way for exploring its optical, electrical, superconducting, and mechanical properties.
2015
Core/Shell Nanowire; Hexagonal Crystal Structure; Raman Spectroscopy; Silicon; Single-Crystalline; X-ray Diffraction; Condensed Matter Physics; Bioengineering; Chemistry (all); Materials Science (all); Mechanical Engineering
01 Pubblicazione su rivista::01a Articolo in rivista
Hexagonal Silicon Realized / Hauge, Håkon Ikaros T; Verheijen, Marcel A.; Conesa Boj, Sonia; Etzelstorfer, Tanja; Watzinger, Marc; Kriegner, Dominik; Zardo, Ilaria; Fasolato, Claudia; Capitani, Francesco; Postorino, Paolo; Kölling, Sebastian; Li, Ang; Assali, Simone; Stangl, Julian; Bakkers, Erik P. A. M.. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 15:9(2015), pp. 5855-5860. [10.1021/acs.nanolett.5b01939]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/873920
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