We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C–SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.

Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing / Gupta, B.; DI BERNARDO, Iolanda; Mondelli, P.; DELLA PIA, Ada; Betti, Maria Grazia; Iacopi, F.; Mariani, Carlo; Motta, N.. - In: NANOTECHNOLOGY. - ISSN 0957-4484. - STAMPA. - 27:18(2016), p. 185601. [10.1088/0957-4484/27/18/185601]

Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing

DI BERNARDO, IOLANDA;DELLA PIA, ADA;BETTI, Maria Grazia;MARIANI, CARLO;
2016

Abstract

We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C–SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.
annealing; epitaxial growth; graphene; polishing; SiC; Bioengineering; Chemistry (all); Electrical and Electronic Engineering; Mechanical Engineering; Mechanics of Materials; Materials Science (all)
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Effect of substrate polishing on the growth of graphene on 3C-SiC(111)/Si(111) by high temperature annealing / Gupta, B.; DI BERNARDO, Iolanda; Mondelli, P.; DELLA PIA, Ada; Betti, Maria Grazia; Iacopi, F.; Mariani, Carlo; Motta, N.. - In: NANOTECHNOLOGY. - ISSN 0957-4484. - STAMPA. - 27:18(2016), p. 185601. [10.1088/0957-4484/27/18/185601]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/873124
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