We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET–F2TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.
Pressure-dependent relaxation in the photoexcited mott insulator et - F 2 TCNQ: Influence of hopping and correlations on quasiparticle recombination rates / Mitrano, M.; Cotugno, G.; Clark, S. R.; Singla, R.; Kaiser, S.; Stähler, J.; Beyer, R.; Dressel, M.; Baldassarre, Leonetta; Nicoletti, Daniele; Perucchi, A.; Hasegawa, T.; Okamoto, H.; Jaksch, D.; Cavalleri, A.. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - STAMPA. - 112:11(2014), p. 117801. [10.1103/PhysRevLett.112.117801]
Pressure-dependent relaxation in the photoexcited mott insulator et - F 2 TCNQ: Influence of hopping and correlations on quasiparticle recombination rates
BALDASSARRE, Leonetta;NICOLETTI, DANIELE;
2014
Abstract
We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET–F2TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.