A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.
Core-level photoemission study of 2D ordered Bi/Si(100) interfaces / Valdis, Corradini; Luca, Gavioli; Mariani, Carlo. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 430:1(1999), pp. 126-136. [10.1016/s0039-6028(99)00426-4]
Core-level photoemission study of 2D ordered Bi/Si(100) interfaces
MARIANI, CARLO
1999
Abstract
A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
