A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.

Core-level photoemission study of 2D ordered Bi/Si(100) interfaces / Valdis, Corradini; Luca, Gavioli; Mariani, Carlo. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 430:1(1999), pp. 126-136. [10.1016/s0039-6028(99)00426-4]

Core-level photoemission study of 2D ordered Bi/Si(100) interfaces

MARIANI, CARLO
1999

Abstract

A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.
1999
bismuth; metal-semiconductor interfaces; silicon; surface relaxation and reconstruction synchrotron radiation photoelectron spectroscopy
01 Pubblicazione su rivista::01a Articolo in rivista
Core-level photoemission study of 2D ordered Bi/Si(100) interfaces / Valdis, Corradini; Luca, Gavioli; Mariani, Carlo. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 430:1(1999), pp. 126-136. [10.1016/s0039-6028(99)00426-4]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/83863
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