The contributions of the two-dimensional phonon dispersion to the double-resonant Raman scattering process in graphene is determined from the line shape of the two-phonon combination mode around 2450 cm(-1). This mode is usually referred to as G* or D + D ''. By combining Raman experiments with excitation energies up to 2.8 eV and a full two-dimensional calculation of the double-resonant Raman process based on fourth-order perturbation, we can describe in detail the composition of this two-phonon mode and explain the asymmetry on the high-frequency side. The asymmetry directly reflects phonon contributions with wave vectors away from the high-symmetry lines in the Brillouin zone. The main peak of this mode originates from the K Gamma high-symmetry line highlighting and supporting two important findings: first, the existence of so-called inner processes and, second, the dominant contribution along the high-symmetry line. DOI: 10.1103/PhysRevB.87.075402

Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering / May, Patrick; Lazzeri, Michele; Venezuela, Pedro; Herziger, Felix; Callsen, Gordon; Reparaz, Juan S.; Hoffmann, Axel; Mauri, Francesco; Maultzsch, Janina. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 87:7(2013). [10.1103/PhysRevB.87.075402]

Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering

MAURI, FRANCESCO;
2013

Abstract

The contributions of the two-dimensional phonon dispersion to the double-resonant Raman scattering process in graphene is determined from the line shape of the two-phonon combination mode around 2450 cm(-1). This mode is usually referred to as G* or D + D ''. By combining Raman experiments with excitation energies up to 2.8 eV and a full two-dimensional calculation of the double-resonant Raman process based on fourth-order perturbation, we can describe in detail the composition of this two-phonon mode and explain the asymmetry on the high-frequency side. The asymmetry directly reflects phonon contributions with wave vectors away from the high-symmetry lines in the Brillouin zone. The main peak of this mode originates from the K Gamma high-symmetry line highlighting and supporting two important findings: first, the existence of so-called inner processes and, second, the dominant contribution along the high-symmetry line. DOI: 10.1103/PhysRevB.87.075402
2013
01 Pubblicazione su rivista::01a Articolo in rivista
Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering / May, Patrick; Lazzeri, Michele; Venezuela, Pedro; Herziger, Felix; Callsen, Gordon; Reparaz, Juan S.; Hoffmann, Axel; Mauri, Francesco; Maultzsch, Janina. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 87:7(2013). [10.1103/PhysRevB.87.075402]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/838615
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