In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon coupling, the electron-electron interaction results in an enhancement of the superconducting critical temperature. By performing first-principles calculations beyond density functional theory, we prove that this effect accounts for the unconventional doping dependence of the superconducting transition temperature (T-c) and of the magnetic susceptibility measured in LixZrNCI. Finally, we discuss what are the conditions for a maximal T-c enhancement in weakly doped two-dimensional semiconductors.

Universal Increase in the Superconducting Critical Temperature of Two-Dimensional Semiconductors at Low Doping by the Electron-Electron Interaction / Calandra, Matteo; Zoccante, Paolo; Mauri, Francesco. - 114:7(2015). [10.1103/PhysRevLett.114.077001]

Universal Increase in the Superconducting Critical Temperature of Two-Dimensional Semiconductors at Low Doping by the Electron-Electron Interaction

MAURI, FRANCESCO
2015

Abstract

In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon coupling, the electron-electron interaction results in an enhancement of the superconducting critical temperature. By performing first-principles calculations beyond density functional theory, we prove that this effect accounts for the unconventional doping dependence of the superconducting transition temperature (T-c) and of the magnetic susceptibility measured in LixZrNCI. Finally, we discuss what are the conditions for a maximal T-c enhancement in weakly doped two-dimensional semiconductors.
2015
01 Pubblicazione su rivista::01a Articolo in rivista
Universal Increase in the Superconducting Critical Temperature of Two-Dimensional Semiconductors at Low Doping by the Electron-Electron Interaction / Calandra, Matteo; Zoccante, Paolo; Mauri, Francesco. - 114:7(2015). [10.1103/PhysRevLett.114.077001]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/838591
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