We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(110)] system. Analsis of the elastic peak intensity, of the substrate's Fuchs-Kliewer phonon and dopant-induced free carrier plasmon, shows the influence exerted on GaAs by the first semiconducting Bi monolayer and by the subsequent semimetallic clusters at higher coverage.
VIBRATIONAL AND COLLECTIVE EXCITATIONS IN THE BI/GAAS(110) SYSTEM / Mariani, Carlo; Valentina De, Renzi; R., Compano. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 56-8:(1992), pp. 247-251. (Intervento presentato al convegno 3RD INTERNATIONAL CONF ON THE FORMATION OF SEMICONDUCTOR INTERFACES ( ICFSI-3 ) tenutosi a ROME, ITALY nel MAY 06-10, 1991) [10.1016/0169-4332(92)90242-p].
VIBRATIONAL AND COLLECTIVE EXCITATIONS IN THE BI/GAAS(110) SYSTEM
MARIANI, CARLO;
1992
Abstract
We present a high resolution electron energy loss spectroscopy investigation of the Bi/[n-type GaAs(110)] system. Analsis of the elastic peak intensity, of the substrate's Fuchs-Kliewer phonon and dopant-induced free carrier plasmon, shows the influence exerted on GaAs by the first semiconducting Bi monolayer and by the subsequent semimetallic clusters at higher coverage.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
